silicon epicap diodes designed for general frequency control and tuning applications; providing solidstate reliability in replacement of mechanical tuning methods. ? high q with guaranteed minimum values at vhf frequencies ? controlled and uniform tuning ratio ? available in surface mount package maximum ratings rating symbol mmbv109lt1 mv209 unit reverse voltage v r 30 vdc forward current i f 200 madc forward power dissipation @ t a = 25 c derate above 25 c p d 200 2.0 200 1.6 mw mw/ c junction temperature t j +125 c storage temperature range t stg 55 to +150 c device marking mmbv109lt1 = m4a, mv209 = mv209 electrical characteristics (t a = 25 c unless otherwise noted.) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m adc) v (br)r 30 e e vdc reverse voltage leakage current (v r = 25 vdc) i r e e 0.1 m adc diode capacitance temperature coefficient (v r = 3.0 vdc, f = 1.0 mhz) tc c e 300 e ppm/ c c t , diode capacitance v r = 3.0 vdc, f = 1.0 mhz pf q, figure of merit v r = 3.0 vdc f = 50 mhz c r , capacitance ratio c 3 /c 25 f = 1.0 mhz (note 1) device min nom max min min max mmbv109lt1, mv209 26 29 32 200 5.0 6.5 1. c r is the ratio of c t measured at 3 vdc divided by c t measured at 25 vdc. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 october, 2001 rev. 3 683 publication order number: mmbv109lt1/d mmbv109lt1, mv209 2632 pf voltage variable capacitance diodes mmbv109lt1 and mv209 are preferred devices 1 2 3 case 31808, style 6 sot23 (to236ab) 1 2 case 18206, style 1 to92 (to226ac) 3 cathode 1 anode 2 cathode 1 anode sot23 to92
mmbv109lt1, mv209 http://onsemi.com 684 figure 1. diode capacitance 40 32 24 16 8 0 1 3 10 30 100 v r , reverse voltage (volts) c t , capacitance - pf figure 2. figure of merit f, frequency (mhz) figure 3. leakage current t a , ambient temperature figure 4. diode capacitance t a , ambient temperature q, figure of merit 10 1000 100 10 100 1000 , reverse current (na) 100 -60 0.01 0.001 0 +40 +100 c t , diode capacitance (normalized) 1.04 -75 1.02 1.00 0.98 0.96 -25 +25 +75 +12 5 v r = 3.0 vdc f = 1.0 mhz c t c c + c j 36 28 20 12 4 f = 1.0 mhz t a = 25 c v r = 3 vdc t a = 25 c v r = 20 vdc +120 +140 +80 +60 +20 -40 -20 i r 0.1 1.0 10 20 2.0 0.2 0.02 0.002 0.006 0.06 0.6 6.0 60 -50 0 +50 +100 1.03 1.01 0.99 0.97 notes on testing and specifications 1. c r is the ratio of c t measured at 3.0 vdc divided by c t measured at 25 vdc.
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